Meklēšana

uz BESPOC (Broad Engagement in Science, Point of Contact) modeli. BESPOC modelis sastāv no vairākiem moduļiem un ir izstrādāts ar mērķi palīdzēt pētniecības organizācijām īstenot ideju par vienotu kontaktpunktu, kas palīdzētu dažādos sabiedriskās zinātnes jautājumos. Plašāk iespējams uzzināt publicētajā ziņojumā. Lasīt ziņojumu

uz BESPOC (Broad Engagement in Science, Point of Contact) modeli. BESPOC modelis sastāv no vairākiem moduļiem un ir izstrādāts ar mērķi palīdzēt pētniecības organizācijām īstenot ideju par vienotu kontaktpunktu, kas palīdzētu dažādos sabiedriskās zinātnes jautājumos. Plašāk iespējams uzzināt publicētajā ziņojumā. Lasīt ziņojumu

of Technological Processes and Obtained Thin Films: Lot 3: Mass Spectrometer System CPV reference number: 38000000-0. 15.03. 2012. TED No.89674-2012 20/03/2012 02.05. 2012. 11.00 1 SIA „Faneks”, reg.No. LV40 002012606, Kr.Barona str. 8-6, Riga, LV-1050, Latvia 14.05. 2012. 5 months 13860,00 Contact person: Janis Pinnis, Secretary of the Procurement Commission, tel.+371 67260545, fax: +371 67132778, e-mail: Janis.Pinnis@cfi.lu.lv Tender Regulation: Answer to the Question 18.04.2012

/Science Bachelor’s degree with specialization or 4 years Bachelor’s degree is comparable as finished University Education in Latvia. Academic transcript Officially certified copies of the documents must be presented in original language and in English; University of Latvia accepts applications only with 1 st and 2 nd Class/Division diplomas. It is recommended to submit all education documents for more qualitative recognition of education. The University of Latvia does not accept education documents from informal education institutions and further education/continuing education institutions. Documents (education diploma and statement on punishability) must be legalised with an Apostille certificate. RESIDENCE PERMIT Documents for temporary residence permit have to be submitted: Personally in the Embassy of Latvia in India, or It could be provided by University of Latvia. Please contact with admissions coordinator for further matters. Master’s degree and PhD students can

. Mexico 29. Turkmenistan 10. France 20. Moldova 30. 31. United Kingdom Uzbekistan *The Agreements can be found at the following links: izm.izm.gov.lv/starptautiska-sadarbiba/starpvaldibu-ligumi.html izm.izm.gov.lv/starptautiska-sadarbiba/starpresoru-ligumi.html **Scholarship holders from Poland who are granted a scholarship for studies and research in Latvian HEIs based on the Latvian and Polish Cultural and Educational Programme of Cooperation for the Years 2013 – 2016 receive their scholarship from the sending Party. Applicants from Poland are kindly asked to contact the Bureau for Academic Recognition and International Exchange of the Republic of Poland ( www.buwiwm.edu.pl ). ***Applicants from Lithuania are required to apply via the Education Exchange Support Foundation of Lithuania ( www

management skills and intercultural communication skills. There is no conference fee . For additional information, please feel free to contact the conference organisers at anna.stavicka@lu.lv

Registration is closed! Welcome to the registration for DB&IS 2022! To register for the conference, please: 1) Fill in the registration form 2) Pay the registration fee Please choose payment options: bank transfer or payment with a credit card Please contact us at dbis2022@lu.lv if an invoice is required. Conference Fees Terms and Conditions: 50% of paid registration fee (except paper authors) will be refunded if notice of cancellation is received by 20 June 2020. No refunds will be made for cancellations made after 20 June 2022. 100% payment to be made if fees not paid at the time of cancellation. There will be no refund for no-shows. Payments made by credit card will be refunded to the same credit card. Payments made by bank transfer will be refunded to the same bank account from which the payment was made. Payments made by bank transfer originating outside of the EU will be refunded by bank transfer. All applicable fees and payment

Kaunas Science & Technology Park, Lithuania Romanas Zontovičius is a Director of Innovation and Entrepreneurship Development Department at Kaunas Science and Technology Park. Before joining the Park Romanas worked for various IT companies in Silicon Valley (San Francisco Bay Area, USA). 7 years with GetJar, one the most successful Lithuanian startups. He did Sales and Sales Operations and was a primary contact for many key clients such as Facebook, Google, Amazon, Zynga, eBay, and many others. When at Spigot he was VP of Sales and managed major deals with foreign telecoms. When at Nextury Ventures he mentored portfolio startups, help them get into various acceleration programs, and was their agent in Silicon Valley. For the last 2 years Romanas worked with Waymo/Goggle, the creators of autonomous vehicles as a lecturer/senior instructor who taught classes for the current and future safety drivers as well as future safety instructors. Currently Romanas runs a Startup pre

The conference will be held May 14, 2010 in the Museum of the University of Latvia. Sponsored by the Nordic Council of Ministers and Governments of Latvia and France Organisers: Tatjana Sjakste (Institute of Biology, University of Latvia) and Nikolajs Sjakste (University of Latvia) Contacts: tanja@email.lubi.edu.lv ; nikolajs.sjakste@lu.lv Venue: Museum of the University of Latvia, Raiņa blvd. 19, room 415 Registration: 2010 May 14th, Friday, 9.30-10.00 Scientific Program 10.00 Tatjana Sjakste (Latvia) Greetings and Workshop opening Session I Chair – Nikolajs Sjakste (Latvia) 10.10 Yegor Vassetzky (France) Intranuclear relocalization of translocated regions: a common mechanism of oncogene activation in lymphomas? 10.40 Joelle Wiels (France) Epstein-Barr virus (EBV) and resistance to p53-dependent apoptosis 11.10 Ruslan Kalendar (Finland) Evolution and mobile elements 11.40 Cofee break Session II Chair – Ruslan Kalendar (Finland) 12.00 Kesara

Ceturtdien, 17.februārī plkst. 12.30, Ķengaraga ielā 8, konferenču zālē Dr.I.Shorubalko (Šveice) „Electronic properties of gate defined and etched quantum dots in InAs nanowires” Two different methods to fabricate few-electron quantum dots (Qds) in InAs nanowires (NWs) and a highly sensitive charge detector are demonstrated. In the first method QDs are defined electrostatically by top finger-gates. This simple technique produces high quality and fully tunable QDs containing a small number of electrons. For particular spin configurations in the double dot, we observe that the current can be suppressed due to the Pauli exclusion principle. We use this Pauli blockade spectroscopy to investigate spin relaxation mechanisms, as well as mixing of spin states. In the second method we use a single local-wet-etching step to fabricate a QD in a NW and a quantum point contact (QPC) in an underlying two-dimensional electron gas. The self-aligned QPC is used as a local gate for the QD